Atomic Scale Analysis of Complex Oxide Interfaces
نویسندگان
چکیده
Aberration correction in the Scanning Transmission Electron Microcope (STEM) is pushing the achievable spatial resolution for imaging and spectroscopy into the sub-angstrom regime, providing a new level of insight into the structure/property relations of complex materials. The combination of atomic-resolution Z-contrast scanning transmission electron microscopy and electron energy loss spectroscopy (EELS) represents a powerful method to link the atomic and electronic structure of solids to macroscopic properties. Images now show greatly improved contrast and signal to noise ratio, sufficient to allow sensitivity down to the single atom level in both imaging and spectroscopy. Therefore, the electronic structure of solids can now be probed with a spatial resolution close to 1 Å[1,2], allowing the properties of interfaces to be probed in unprecedented detail.
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